http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2019124442-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K2003-2244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K2003-2213 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K3-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K3-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1409 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67294 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1454 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 |
| filingDate | 2018-12-19^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-01-14^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2019124442-A1 |
| titleOfInvention | Polishing composition to eliminate ridges around the laser mark |
| abstract | PROBLEM TO BE SOLVED: To provide a polishing composition for eliminating a ridge in a peripheral portion of a laser mark in a wafer polishing step, and a polishing method using the same. SOLUTION: This is a polishing composition for eliminating the ridges around the laser mark of a wafer having a laser mark, and the polishing composition contains a water-soluble compound, a chelating agent, and metal oxide particles. Containing and having a pH of 7-12, the water-soluble compound has a hydrophobic moiety and a hydrophilic moiety, the hydrophilic moiety having a hydroxyl group, a hydroxyethyl group, and acyloxy at its terminal or side chain. The above-mentioned polishing composition having a group, a carboxylic acid group, a carboxylic acid base, a sulfonic acid group, or a sulfonic acid base, wherein the water-soluble compound has a content of 5 to 700 ppm in the polishing composition. The metal oxide particles are silica particles, zirconia particles, or ceria particles having an average primary particle size of 5 to 100 nm in a colloidal sol. A method for polishing a wafer that polishes the ridge around the laser mark. [Selection diagram] None |
| priorityDate | 2017-12-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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