http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0138278-B1
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-48 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-22 |
filingDate | 1995-01-24^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 1998-04-27^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af87f624c141419d1f3497213b0a14f2 |
publicationDate | 1998-04-27^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-0138278-B1 |
titleOfInvention | X-ray lithography mask and manufacturing method thereof |
abstract | Disclosed are a mask for X-ray lithography and a method of manufacturing the same. The mask according to the present invention forms a mask pattern on the first silicon substrate, in order to protect the mask pattern, an oxide film is coated on the mask pattern, and the second silicon substrate is bonded to the second silicon substrate on which the member is to be formed. It is thinned by the method. In this case, the thickness of the member may be adjusted according to the amount of etching in grinding and polishing.n n n Therefore, since the member is formed after the mask pattern is formed, the mask deformation and damage caused by the mask pattern process can be prevented and the thickness of the member can be arbitrarily adjusted. |
priorityDate | 1995-01-24^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 |
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