http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100413582-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5256 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 |
| filingDate | 2001-06-28^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-12-31^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-12-31^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100413582-B1 |
| titleOfInvention | Method for fabricating a pad-layer/fuse-layer of a semiconductor device |
| abstract | The present invention relates to a method for forming a pad layer / fuse layer for a semiconductor device. In the present invention, when the etching process for removing the "anti-reflective coating layer and insulating layer" is performed, the chemical action of the etching gas is diluted. In addition, a separate "chemical dilution gas supply process" for the purpose of the process or a "pressure control process" for the special control of the pressure inside the etch chamber is carried out so that the final pad layer and the fuse layer are respectively "reflected". To prevent the coating layer from being removed. &Quot; " the structure in which the insulating layer remains ".n n n When the present invention is achieved, since the final pad layer and the fuse layer can each naturally form a "structure in which the anti-reflective coating layer is removed" and "structure in which the insulating layer remains," anti-reflection in the production line Various problems caused by the remaining of the coating layer and problems caused by the complete removal of the insulating layer can be solved simultaneously. After all, when the present invention is achieved, the problems caused by the difference in the etching rate of the "anti-reflective coating layer and the insulating layer" can be solved quickly, so that the pad layer and the fuse layer can perform the role assigned to them stably without any problems. Therefore, in the production line, it is possible to easily obtain the effect of improving the quality of the finally completed semiconductor device to a certain level or more. |
| priorityDate | 2001-06-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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