http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101014739-B1

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filingDate 2006-03-02^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2011-02-15^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2011-02-15^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101014739-B1
titleOfInvention Manufacturing method of multilayer wiring structure
abstract This invention makes it a subject to connect with a via hole finer than the past, and to leave a space | gap in a via hole, and to manufacture a multilayer wiring element more cheaply. An interlayer insulating film 18 is formed on the first metal wiring element 11, a second metal wiring element 19 is formed on the interlayer insulating film 18, and the first metal wiring element 11 and the second metal wiring element are formed. 19 is connected via a via hole. By using the process of forming the via post 13 on the 1st metal wiring element 11, and the screen mask 17 which has the non-discharge area | region 16 slightly larger than the head part of the via post 13, Printing the interlayer insulating film 18 lower than the height of the via post 13 while roughly aligning the discharge region 16 with the head portion of the via post 13, curing the interlayer insulating film 18, And forming a second metal wiring element 19 connected to the via post 13 on the interlayer insulating film 18.
priorityDate 2005-03-14^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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