http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101303178-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2007-08-30^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-09-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-09-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101303178-B1 |
| titleOfInvention | Capacitor dielectric film manufacturing method |
| abstract | Disclosed is a method of manufacturing a dielectric film of a capacitor having excellent electrical characteristics and leakage current characteristics without lowering throughput. The disclosed invention is a method of manufacturing a dielectric film by repeating a unit cycle consisting of supplying a first reaction source, purging, supplying a second reaction source, and purging a plurality of times. At least one of the first reaction source and the second reaction source is supplied for a first time during an initial cycle of the plurality of cycles, and a first reaction source and a second during the later cycles from the initial cycle to the final cycle. The reaction source is fed for a second time shorter than the first time. At this time, the number of initial cycles is smaller than the number of late cycles.n n n n Cycle, ALD, Reaction Source, Hafnium Oxide, Aluminum Oxide |
| priorityDate | 2006-10-10^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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