| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2003-04-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac07efe7464fa3c1971be55606c6cb48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e94f97c8ce83f4379a62bbe1464fc932
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_620ab7c40b26ae68d757dab9488fc533
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9bd7e53031b2868c1428f006c41917c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9335183d93ccd927c0bee38ea23eb875
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf964a0010343b8e75e36b5aa535e459
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2eaaf3987d563507c090be62debdaac9 |
| publicationDate |
2004-11-05^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20040093255-A |
| titleOfInvention |
Methods of forming metal thin film and lanthanum oxide layer by ALD and method of forming high dielectric constant layer for semiconductor device |
| abstract |
A method of forming a high dielectric film made of a metal oxide is disclosed by a two-step ALD deposition process in which an oxygen depleted metal oxide film and a metal oxide film are sequentially formed. In the present invention, an oxygen-deficient metal oxide film made of a metal oxide having an oxygen content less than stoichiometric amount is formed on a semiconductor substrate by an ALD process using a first reactant made of an organometallic compound. A metal oxide film is formed on the oxygen depleted metal oxide film by an ALD process using the second reactant comprising the first reactant and the oxidant. In order to form a lanthanum oxide film by the method according to the present invention, after forming a first lanthanum oxide film having a La 2 O x (x <3) composition by an ALD process, a second lanthanum oxide film having a La 2 O 3 composition is formed thereon. Form. It is advantageous to use an alkoxide-based organometallic compound as the lanthanum source. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100729354-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101303178-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7838438-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100809685-B1 |
| priorityDate |
2003-04-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |