http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101724291-B1

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filingDate 2015-11-20^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-04-10^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e2683ae744e07cbe3e64db926aaf630
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publicationDate 2017-04-10^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101724291-B1
titleOfInvention Apparatus for growing silicon carbide single crystal using the method of reversal of Physical Vapor Transport
abstract The present invention relates to an apparatus for growing a silicon carbide single crystal using a method of reverse physical vapor transport (PVT). According to a preferred embodiment of the present invention, the apparatus for growing a silicon carbide single crystal using a method of reverse PVT includes: a crucible body having a plurality of walls for accommodating a seed crystal in a lower portion of an inner space formed by the plurality of walls; a quartz tube for accommodating the crucible body; a heating device disposed outside the quartz tube for applying heat; and porous graphite provided inside the wall of the crucible body for surrounding the region where the seed crystals are arranged in the crucible body. The wall of the crucible body includes a guide slope unit slantingly provided at one surface facing the seed crystal for surrounding the seed crystal. The guide slope unit includes: an inner wall disposed in the accommodation space of the crucible body and facing the seed crystal; and an outer wall disposed inside the wall of the crucible body, spaced apart from the inner wall at a predetermined distance, and facing the porous graphite. The porous graphite is disposed inside the wall of the crucible body, and may be spaced apart from the outer wall of the guide slope at a predetermined distance.
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priorityDate 2015-11-20^^<http://www.w3.org/2001/XMLSchema#date>
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