http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130007354-A

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filingDate 2011-07-01^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f79853ef51a5faacebfe68c4ea074f47
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publicationDate 2013-01-18^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20130007354-A
titleOfInvention Silicon Crystal Growth Apparatus and Silicon Crystal Growth Method Using The Same
abstract Disclosed are a silicon crystal growth apparatus capable of shortening a process time and reducing a manufacturing cost, and a silicon crystal growth method using the same. The silicon crystal growth apparatus of the present invention is provided in a chamber in which silicon crystals grow, a cooling jacket for cooling the outer portion of the silicon sample so that the outer portion of the silicon sample is not melted, and installed so as to be moved up and down above the cooling jacket. And heating means for heating and melting the silicon sample contained in the cooling jacket, and pulling means for raising and lowering the heating means.
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priorityDate 2011-07-01^^<http://www.w3.org/2001/XMLSchema#date>
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