| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_083da14eddcdea49500a769dcdf47b6a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-52 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-204 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate |
2013-05-10^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de8afe78553df4da56dcd9fc024b276d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ec70c52c4c8e46d743f990986905e85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a9782d0069128bf64e46d627c4e09da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_149d5c0c35a7fdf65cd83170a3b5c01d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_937fb8bb58793f241a79d3ce7c31e94c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50223d2b81011f3d38aa4eb1b1162fa3 |
| publicationDate |
2014-01-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201403852-A |
| titleOfInvention |
Sulf-based solar cell with improved resistance to photodegradation |
| abstract |
A solar element having high resistance to photodegradation is described. A wide optical gap interface layer disposed between the p-doped semiconductor layer and the intrinsic semiconductor layer is resistant to photodegradation by a treatment using a hydrogen-containing plasma. In one embodiment, a p-i-n structure is formed with an interface layer in the p/i interface. Optionally, an additional interface layer treated with hydrogen-containing plasma is formed between the intrinsic layer and the n-doped layer. Alternatively, the upper portion of the intrinsic layer is treated with a hydrogen-containing plasma prior to depositing the n-doped semiconductor layer. The interface layer is also suitable for multi-junction solar cells with multiple p-i-n structures. The p-doped and n-doped layers may optionally comprise different compositions and sub-layers of different morphology (eg, microcrystalline or amorphous). The overall structure shows improved stability and improved performance levels for photodegradation. |
| priorityDate |
2012-05-10^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |