http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201439668-A

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filingDate 2013-11-13^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d73fddeb26fc0eb13bbd594190fec5ec
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publicationDate 2014-10-16^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201439668-A
titleOfInvention Method of etching a layer of an extreme ultraviolet material used to form a reticle
abstract Methods and apparatus for etching a reticle are provided herein. In one embodiment, a method of etching an ARC layer or an absorber layer disposed on a reticle includes the steps of: transporting a film stack into an etch chamber having a partially exposed ARC layer or absorption through the patterned layer a layer; providing a gas mixture into the processing chamber, the gas mixture comprising at least one fluorine-containing gas; applying a source RF power to form a plasma from the gas mixture; applying a first form of RF bias power to the substrate for a first period of time; Applying an RF bias power of the second form that is detached from the substrate for a second period of time; and etching the ARC layer or the absorbing layer through the patterned layer in the presence of the plasma.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10818479-B2
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priorityDate 2012-11-30^^<http://www.w3.org/2001/XMLSchema#date>
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