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filingDate 2015-12-01^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-03-11^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99a9443b928bdac1395010c5ad8e378f
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publicationDate 2018-03-11^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I618247-B
titleOfInvention Semiconductor structure and method of manufacturing same
abstract A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a fin structure formed on a substrate and a first gate structure formed and crossing the fin structure. The semiconductor structure further includes a first source / drain structure formed in the fin structure adjacent to the first gate structure and a first contact formed on the first source / drain structure. In addition, the first contact includes a first extension portion extending into the first source / drain structure.
priorityDate 2015-08-21^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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