http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I685553-B
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_11d738aa9b5b691f2f5094e7b819ac93 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 |
filingDate | 2018-08-24^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2020-02-21^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7174605ac9a137b675cdd5c685a0bb7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92f9aea39f1f43f2d5a903a8292916ae |
publicationDate | 2020-02-21^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-I685553-B |
titleOfInvention | Metal chemical mechanical planarization (cmp) composition and methods therefore |
abstract | Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through SiliconVia (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise water; abrasive; single chelator, dual chelators or tris chelators; morpholino family compounds as Cu dishing reducing agents. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide can be used in the formulations. |
priorityDate | 2017-08-24^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
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