http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I710004-B

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filingDate 2017-10-19^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-11-11^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be414c9c5741d522aaf0ddd7ce1a379d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45d810bca8413f7a789db00ec8997e5d
publicationDate 2020-11-11^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I710004-B
titleOfInvention Reflection mode photomask and fabrication method therefore
abstract A method of fabricating a mask blank includes depositing a reflective multilayer over a substrate, depositing a capping layer over the reflective multilayer, depositing an absorber layer over the capping layer, and depositing an anti-reflective coating (ARC) layer over the absorber layer. The ARC layer is a single material film.
priorityDate 2017-08-22^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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