| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2016-03-16^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-08-21^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fee656cdfd4e1cfc97b65693288e942d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c427547cb3aa38b4576158ed69629e3f |
| publicationDate |
2018-08-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10056256-B2 |
| titleOfInvention |
Method of priming photoresist before application of a shrink material in a lithography process |
| abstract |
A photoresist layer is formed over a patternable layer. The photoresist layer containing a negative tone photoresist material. An exposure process is performed to the photoresist layer. A post-exposure bake (PEB) process is performed to the photoresist layer. The photoresist layer is rinsed to develop a photoresist pattern. A primer material is applied to the photoresist pattern. The primer material is configured to: straighten a profile of the photoresist pattern, or to increase a number of deprotected acid labile group (ALG) units of the photoresist material, or to bond with the deprotected ALG units of the photoresist material. After the primer material is applied, the photoresist pattern is enlarged by coating a shrink material over the photoresist pattern, baking the shrink material, and removing portions of the shrink material. The patternable layer is patterned using the enlarged photoresist pattern as a mask. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10319590-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10796910-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10573519-B2 |
| priorityDate |
2016-03-16^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |