http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004166447-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 |
| filingDate | 2003-02-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99cf6c4dead4a2f5ce61993e3bdf15ee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9b17138be2b4c3dceb6a31c0c6350a8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c50ca0e6a22787f64a45dff5b2520234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8310d57730062302ee4f0e28b79fc43f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9f0a3c9f20635359b55dc76eee0f98f |
| publicationDate | 2004-08-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2004166447-A1 |
| titleOfInvention | Method for shrinking pattern photoresist |
| abstract | First of all, a semiconductor substrate with a photoresist layer thereon is provided. Then a plurality of pattern photoresists with a first line width are formed on the semiconductor substrate by a photolithography process. Next, an acid-process is performed to form a diffusion layer having the acid-based materials on the plurality of pattern photoresists and the semiconductor substrate. Afterward, a re-baking process is performed to diffuse the acid-based materials within diffusion layer into the plurality of pattern photoresists such that the acid-based materials chain-react with the plurality of pattern photoresist located on the diffusion depth of the acid-based materials so as to form a plurality of reaction layers within the skin layers of the plurality of pattern photoresists, wherein the diffusion depth of the acid-based materials in the plurality of pattern photoresists depends on the diffuse rate of the acid-based materials in the acid-process. Subsequently, a redeveloping process is performed to remove the plurality of reaction layers so as to form a plurality of the pattern photoresists with a second line width on the semiconductor substrate. Furthermore, all processes disclosed as above are performed in in-situ environment. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112011101962-B4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009214985-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103811334-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8986920-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9524043-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015108085-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10056256-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007207404-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3035120-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014134522-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7670760-B2 |
| priorityDate | 2003-02-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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