Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
filingDate |
2016-06-27^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2019-01-15^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bca60e11ea5cabf6bf9d4c65da0e3a6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62bda92ebb6b753395cadcd2de2ad402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b44f76e49b36dd2909eb36bf02900988 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
publicationDate |
2019-01-15^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10181531-B2 |
titleOfInvention |
Semiconductor device including transistor having low parasitic capacitance |
abstract |
A minute transistor is provided. A transistor with small parasitic capacitance is provided. A transistor with high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor and a second insulator embedded in a first insulator, a second conductor and a third conductor. Edges of the second conductor and the third conductor facing each other each has a taper angle of 30 degree or more and 90 degree or less. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021234046-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11069816-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11545578-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11211500-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11056491-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11495690-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11177176-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11705524-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11101386-B2 |
priorityDate |
2015-07-08^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |