| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_49f04b1dc6b9fcc2d8b159c5ebee364b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a3d52eacd83e723ebd2ca61b598586c2 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14685 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate |
2017-08-04^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-04-23^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42213376d3d9f731efb49e01dd5c444a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f092aec9d86c0b55a167cb52d17b40a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83dc13540a8b59ad7eaef4ee674555f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1bb1ca3c9025da77e52e097aa13c679c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc2b42858229059dacd7fc3d8bdee9dd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f9535dbd47c608691a7a05c5572e141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a32addbb7b6de1143df9452212274ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88b5a2d76425f75244dc0be4a3fc286d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8d67707d856aa6a211f2ff31dec8436 |
| publicationDate |
2019-04-23^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10269842-B2 |
| titleOfInvention |
Anti-reflection layer for back-illuminated sensor |
| abstract |
An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11114489-B2 |
| priorityDate |
2014-01-10^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |