| abstract |
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers containing molybdenum portions located over a substrate, memory stack structures extending through the alternating stack, and including a memory film and a vertical semiconductor channel, and a backside blocking dielectric layer of a dielectric oxide material including aluminum atoms and at least one of lanthanum or zirconium atoms which directly contacts the molybdenum portions. |