http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015236026-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_26da3723d11a0786897640eceb4d464f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B20-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C17-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8845 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-112 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C17-16 |
| filingDate | 2015-03-02^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a266e689b8e068e76ef2c980fc940fac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd26f63a8cb841850edb315a0265cda6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1408941afc56ac8d7721c3c411522ac8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68c48af45d89b77f08cbf3d37b0546cf |
| publicationDate | 2015-08-20^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2015236026-A1 |
| titleOfInvention | Permanent solid state memory using carbon-based or metallic fuses |
| abstract | Recording data in a permanent solid state memory device forms voids in a patterned data layer between a first wire array and a second wire array. Wires of the first wire array extend transversely to wires in the second wire array thus creating a crossbar array. The conductive material in the data layer is made of a carbon allotrope such that when current is passed through the carbon allotrope, the carbon is quickly oxidized (burned) leaving a complete gap (void) where the conductive material (i.e., fuse) once was. One of the advantages of this method is that the fuse material is fully oxidized, such that there is no material left over from which dendrites can grow. A horizontal configuration in which the data layer is a bowtie structure is also disclosed. The conductive material in the data layer of the present systems and methods may be a metal or metal oxide selected from the following metals: Tungsten (W), Rhenium (Rh), Osmium (Os), Iridium (Ir), Molybdenum (Mo), Ruthenium (Ru), Rhodium (Rh), Chromium (Cr), and Manganese (Mn). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10840259-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10991721-B2 |
| priorityDate | 2010-01-29^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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