| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02387
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02538
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2233 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2017-05-12^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-02-02^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e736b154ebd76f259b31cee524140e45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_516b0159af262c8dbd6b9fa1398e2f8c |
| publicationDate |
2021-02-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10910222-B2 |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
An upper layer (4,5) made of non-doped III-V compound semiconductor is formed on a lower layer (3) made of non-doped III-V compound semiconductor. Impurity source gas is fed through vapor phase diffusion using an organometallic vapor-phase epitaxy device to add an impurity to the upper layer (4,5). The vapor phase diffusion is continued with the feed of the impurity source gas stopped or with a feed amount of the impurity source gas lowered. |
| priorityDate |
2017-05-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |