Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a3d52eacd83e723ebd2ca61b598586c2 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-148 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-148 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-9501 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14806 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J29-385 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J1-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14893 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J31-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B21-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J1-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-95 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B21-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J43-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-148 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J31-50 |
filingDate |
2018-10-31^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-08-03^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af9bcd4fcca3d996b4d708a23c010a99 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44fc59a1685dd38699d52762a3cc7e0c |
publicationDate |
2021-08-03^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11081310-B2 |
titleOfInvention |
Photocathode including silicon substrate with boron layer |
abstract |
A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems. |
priorityDate |
2012-08-03^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |