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filingDate 2018-02-08^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2021-09-07^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11114531-B2
titleOfInvention Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator
abstract A semiconductor device according to an embodiment includes a first electrode; a second electrode; a gate electrode; an n-type first silicon carbide region positioned between the first electrode and the second electrode and between the gate electrode and the second electrode; a p-type second silicon carbide region positioned between the first electrode and the first silicon carbide region; a third silicon carbide region of metal containing at least one element selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt), positioned between the first electrode and the second silicon carbide region and spaced apart from the first silicon carbide region; and a gate insulating layer positioned between the gate electrode and the second silicon carbide region.
priorityDate 2017-04-24^^<http://www.w3.org/2001/XMLSchema#date>
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