| abstract |
A semiconductor device according to an embodiment includes: a semiconductor substrate; an n-type SiC layer provided on one side of the semiconductor substrate; a p-type first SiC region provided in the n-type SiC layer; a metallic second SiC region provided in the p-type first SiC region, the second SiC region containing at least one element selected from the group of Mg, Ca, Sr, Ba, Sc, Y, La, and lanthanoid; a gate electrode; a gate insulating film provided between the gate electrode and the n-type SiC layer, the gate insulating film provided between the gate electrode and the first SiC region; a first electrode provided on the second SiC region; and a second electrode provided on a side of the semiconductor substrate opposite to the n-type SiC layer. |