| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
2020-04-06^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-11-09^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e98568cbe58287c3fc6e3040aaba6fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c41a5e74dd00547738bda4f066657f52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90a255708027d631ac195c88409a26a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54d544ab09c594f707869b59c30663df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ccf414b8979ebb80c675f6c97d9a08b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e780b98eafd0604ee66bfdad1af1491 |
| publicationDate |
2021-11-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11171084-B2 |
| titleOfInvention |
Top via with next level line selective growth |
| abstract |
Embodiments of the present invention are directed to fabrication methods and resulting interconnect structures having a conductive thin metal layer on a top via that promotes the selective growth of the next level interconnect lines (the line above). In a non-limiting embodiment of the invention, a first conductive line is formed in a dielectric layer. A via is formed on the first conductive line and a seed layer is formed on the via and the dielectric layer. A surface of the seed layer is exposed and a second conductive line is deposited onto the exposed surface of the seed layer. In a non-limiting embodiment of the invention, the second conductive line is selectively grown from the seed layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022028783-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11600565-B2 |
| priorityDate |
2020-04-06^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |