http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003141573-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2003-01-28^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_156e1dc622ea838fc4dd456b25da4a87 |
| publicationDate | 2003-07-31^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2003141573-A1 |
| titleOfInvention | Electron beam annealing of metals, alloys, nitrides and silicides |
| abstract | A process for the formation of structures in microelectronic devices such as integrated circuit devices wherein a patterned layer of a metal, alloy, nitride or silicide is subjected to a low temperature, wide beam electron beam annealing. The process involves depositing a silicide, nitride, metal, or metal alloy layer onto a substrate; and then overall flood exposing said entire layer to electron beam radiation under conditions sufficient to anneal the layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101005239-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9275866-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006118892-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113811635-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010033378-A3 |
| priorityDate | 2000-06-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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