| abstract |
Described are methods of manufacturing a strain-inducing layer in semiconductor devices and structures formed to have such strain-inducing layers. Circuit elements are formed on a semiconductor substrate with conductive channel regions within the semiconductor substrate. Metal silicide contacts are formed on the semiconductor substrate and some are electrically connected to the channel regions. A strain-inducing layer can then be formed over the metal silicide contacts. Further, the strain-inducing layer is then treated with thermal processing, photo-thermal processing, or electron irradiation processing thereby increasing the stress of the strain-inducing layer and induce strain upon the crystal lattice structure in the conductive channel regions within the semiconductor substrate. |