| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d59dc404a0c2d83299eabb63ae10740
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_11b818eeb45aacb99ef34f7db622f1ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f246daa82851ebb2db0ecaea4eed55d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9f7cb241dcd8c58fab1e03f172d205a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_19fa1e758da9fc3a9395d1dec3e7f93e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2010-04-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7561fd7bd49383440d23a98abe4a23ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7f65b200892149a1ca567170df99c58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d3e8d8b5f8e9d1e8ea12b487a61122c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_263771a79819cc4fb592a014ff21f929
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_702fc85ff1f1e34e74399c63ea9c3f6e |
| publicationDate |
2010-08-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010200917-A1 |
| titleOfInvention |
Nonplanar device with stress incorporation layer and method of fabrication |
| abstract |
A semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls is formed on an insulating substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and is formed adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body. A thin film is then formed adjacent to the semiconductor body wherein the thin film produces a stress in the semiconductor body. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9917195-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I630685-B |
| priorityDate |
2003-06-27^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |