patent/US-6120846-A

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6120846-A

Outgoing Links

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filingDate	1997-12-23^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	2000-09-19^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7884af168704706e4e5304d6657963e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_962b547ef141bd75b2e7cd22f36fbd02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a0a59714c9b3583ba8f45754646417c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ee5d8a8956e97c4dea17c5f9c9ce981 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e65656ae324ce4da6b6e1f018371649f
publicationDate	2000-09-19^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-6120846-A
titleOfInvention	Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition
abstract	A method is described for the selective deposition of bismuth based ferroelectric films by selective chemical vapor deposition on a substrate. Selectivity in the deposition process is attained by selection of substrate-precursor combinations which assure high bismuth deposition efficiency in certain areas and low bismuth deposition efficiency in other areas in combination with specific process parameters.
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priorityDate	1997-12-23^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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