http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012138228-A1

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_98e40b1a8421719cf6e9e0ae3a689caa
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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F03B11-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05B1-02
filingDate 2010-08-19^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87ec0953304b79ea23a0c14dd4949a71
publicationDate 2012-06-07^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2012138228-A1
titleOfInvention Deep-trench silicon etching and gas inlet system thereof
abstract A deep-trench silicon etching apparatus, including a reaction chamber and a gas source cabinet, the gas source cabinet is connected to the reaction chamber via two independently controlled gas paths; wherein, a first gas path is used to introduce process gas for etch step from the gas source cabinet into the reaction chamber; a second gas path is used to introduce process gas for deposition step from the gas source cabinet into the reaction chamber. The present invention is used to solve the problems of gas mixture and gas delay occurring when process steps are switched.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103915330-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113948358-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017110292-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019295826-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11488812-B2
priorityDate 2009-08-27^^<http://www.w3.org/2001/XMLSchema#date>
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