| abstract |
The present invention belongs to the field of microelectronic device technologies. Specifically, an asymmetric source/drain field-effect transistor and its methods of making are disclosed. A structure of the field-effect transistor comprises: a semiconductor substrate, a gate structure, and a source region and a drain region having a mixed junction and a P-N junction, respectively. The source region and the drain region are asymmetrical structured with respect to each other, one of which comprises a P-N junction, and the other of which comprises a mixed junction, the mixed junction being a combination of a Schottky junction and a P-N junction. According to the present disclosure, a location of a doped region formed by ion implantation is controlled by adjusting an implantation angle, and a unique structure is formed for the asymmetric source/drain field-effect transistor. |