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publicationDate 2016-03-10^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2016071723-A1
titleOfInvention Gas cluster reactor for anisotropic film growth
abstract A method of performing in-situ cleaning of a substrate includes inserting a gas cluster ion beam into a processing chamber containing a substrate, the gas cluster ion beam includes a broad gas cluster ion bean that reaches an entire surface of the substrate. The entire surface of the substrate becomes substantially uniform after an exposure to the gas cluster ion beam.
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