| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82a9e22a923eca64a02a97f0dfb493ed |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66492
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66484
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate |
2019-02-12^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dae1772706bbc2aa5127e6ad5fddba46 |
| publicationDate |
2020-08-13^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020258879-A1 |
| titleOfInvention |
Electrostatic discharge (esd) robust transistor |
| abstract |
A multi-gate active device includes a source region coupled to source contacts and a first drain region coupled to first drain contacts. The multi-gate active device also includes a first meshed silicide stop on the first drain region. The first meshed silicide stop surrounds the first drain contacts. The multi-gate active device further includes a first gate over a first channel between the source region and the first drain region. |
| priorityDate |
2019-02-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |