http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3594227-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4588
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-54
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458
filingDate 1968-07-12^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1971-07-20^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f543e3308deac314eee4b1c265abe645
publicationDate 1971-07-20^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-3594227-A
titleOfInvention Method for treating semiconductor slices with gases
abstract PROCESS FOR DEPOSITION OF EPITAXIAL AND DIELECTRIC FILMS IS DISCLOSED. MOLYBDENUM DISCS FOR HOLDING SEMICONDUCTOR SILCES ARE MOUNTED FOR ROTATIONAL MOVEMENT IN A NEARVERTICAL PLANE AND FOR TRANSLATION ALONG A LOCUS OF POINTS SUBSTANTIALLY EQUIDISTANT FROM A HEAT SOURCE. THE DISCS IN ONE EMBODIMENT ARE RESTED AGAINST THE INCLINED SIDES OF A ROTATING FRUSTOCONICAL HOUSING WITH THEIR EDGES IN CONTACT WITH A HORIZONTAL TRACK. A DEPOSITION CHAMBER ENVELOPING THE APPARATUS PROVIDES DOWNWARD GAS FLOW. OUTSIDE RF COILS ENCIRCLE THE CHAMBER.
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