| abstract |
Growth of shaped crystals, such as silicon, germanium, garnet, sapphire and the like, using a crucible to contain a melt in conjunction with a wettable submerged projection extending above the level of the melt over which is formed a convex or raised meniscus of the melt by surface tension. A seed crystal is brought in contact with the meniscus and then drawn upwardly so that the melt of the meniscus crystallizes out and grows to the crystal lattice of the seed as a continuation thereof. |