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filingDate 1981-09-23^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1984-06-26^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1984-06-26^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4456522-A
titleOfInvention Support and anchoring mechanism for membranes in selectively responsive field effect devices
abstract In the formation of a chemically sensitive field effect device, prior to formation of the gate membrane, an aluminum pad is disposed over the gate, and a polyimide layer is disposed thereover. Photoresist and etching steps produce openings in the polyimide to form a gridwork which is anchored to the device on the periphery of the gate. The aluminum layer is etched completely away, forming a void defined by the suspended polyimide mesh on one side, and the gate insulator on the other. Polymeric membrane is formed in the void by insertion in liquid form.
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