| abstract |
Disclosed is a method of chem-mech polishing an article, preferably an electronic component substrate. The method includes the following steps; n obtaining an article having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and n contacting the article with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles wherein the abrasive particles do not include alumina, a transition metal chelated salt, a solvent for the salt, and a small but effective amount of alumina. n The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry. |