| abstract |
A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water, a nitrogenous compound, and optionally abrasive particles, an oxidizing agent, or a combination thereof. The slurry composition can polish a phase-change memory device at a high rate, can achieve high polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), and can minimize the occurrence of processing imperfections (e.g., dishing and erosion) to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition. |