| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-4821 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-761
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10 |
| filingDate |
1992-09-02^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1994-05-03^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d435657b4434e0271205a05f168e155a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3dc663a15993a8a8f36a7aaec5eb69f5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebd58ada7de8f9109f304b9313dee4c7 |
| publicationDate |
1994-05-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5308440-A |
| titleOfInvention |
Method of making semiconductor device with air-bridge interconnection |
| abstract |
A semiconductor device with air-bridge interconnection comprises: a substrate; a plurality of mesas with distance therebetween smaller than a predetermined value; and a metal layer supported by the plurality of mesas, the metal layer having a narrow portion at the intermediate portion thereof and both ends having larger width than the narrow portion. The air-bridge interconnection is obtained by side-etching controlled during dry-etching using interconnection metal layer as an etching-mask to remove a mass of semiconductor material under the interconnection metal layer. A method of producing the semiconductor device comprises the steps of forming a semiconductor material; forming a metal layer on a portion of the semiconductor material having a narrow portion in the intermediate portion thereof; and forming the air-bridge interconnection by dry-etching with side-etching controlled to form a groove having a predetermined depth; then forming a resistive layer on the bottom of the layer; and then dry-etching the semiconductor material and the metal layers again to remove a mass of the semiconductor material under the metal layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7112866-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004164419-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003209775-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004159950-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6492694-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8033838-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10133362-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6200891-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6033996-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022105232-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007085213-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6117796-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6573169-B2 |
| priorityDate |
1991-09-05^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |