| abstract |
A method of forming a trench isolation structure includes a low pressure chemical vapor deposition (LPCVD) that forms a silicon rich nitride layer as a mask for etching a semiconductor substrate. The LPCVD uses a mixed gas containing at least two different silicon compounds in a silicon source gas. The method can prevent deterioration of gate oxide layer reliability, and enhance an in-wafer and batch uniformity of the silicon rich nitride layer. |