| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
1999-11-08^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-01-16^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e701a6371e470f08800af7ec7b4073e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27d5e02520f3050ff3402fd7bc1a17f6 |
| publicationDate |
2001-01-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6174797-B1 |
| titleOfInvention |
Silicon oxide dielectric material with excess silicon as diffusion barrier layer |
| abstract |
A method for forming upon a substrate employed within a microelectronics fabrication a first dielectric layer, an intermediate diffusion barrier dielectric layer and a conductor layer which comprise an inter-level metal dielectric (IMD) layer with attenuated diffusion between the dielectric layers and conductor layer. There is first provided a substrate employed within a microelectronics fabrication. There is then formed upon the substrate a patterned microelectronics layer. There is then formed over the substrate a first dielectric layer. There is then formed over the substrate a diffusion barrier dielectric layer. There is then formed over the substrate a conductor layer to complete an inter-level metal dielectric (IMD) layer with attenuated inter-diffusion between the dielectric layers and conductor layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011278351-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7186640-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008029844-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102815663-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8609532-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8927359-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6613696-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9010618-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102815663-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8939347-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005009373-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6586347-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8313958-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007026653-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6432808-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9847308-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6455417-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6248603-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8434668-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7109101-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006017166-A1 |
| priorityDate |
1999-11-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |