http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008029844-A1

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filingDate 2006-08-03^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2008-02-07^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2008029844-A1
titleOfInvention Anti-fuse structure optionally integrated with guard ring structure
abstract An anti-fuse structure and a related method for fabricating the anti-fuse structure include a doped well within a semiconductor substrate. A first aperture and a second aperture that expose the doped well are located within a dielectric layer located over the semiconductor substrate and the doped well. A first conductor layer is located within the first aperture and a second conductor layer is located within the second aperture. At least a first anti-fuse material layer contacts the first conductor layer. The first conductor layer and the second conductor layer may comprise doped conductor materials that upon fusing of the anti-fuse structure provide an anti-fuse diode or an anti-fuse resistor.
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