abstract |
A ferroelectric thin film includes: a bismuth oxide polycrystal thin film constituting a buffer layer, and a bismuth-based layered compound thin film represented by the formula: Bi 2 A m-1 BmO 3m+3 wherein A is an atom selected from the group consisting of Na, K, Pb, Ca, Sr, Ba and Bi; B is an atom selected from the group consisting of Fe, Ti, Nb, Ta, W and Mo; and m is an integer of 1 or more. The bismuth oxide polycrystal thin film and the bismuth-based layered compound thin film are formed into a single-phase. |