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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5de3e29c952b7740e53a6677c6edb915
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publicationDate 2001-03-06^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6197600-B1
titleOfInvention Ferroelectric thin film, manufacturing method thereof and device incorporating the same
abstract A ferroelectric thin film includes: a bismuth oxide polycrystal thin film constituting a buffer layer, and a bismuth-based layered compound thin film represented by the formula: Bi 2 A m-1 BmO 3m+3 wherein A is an atom selected from the group consisting of Na, K, Pb, Ca, Sr, Ba and Bi; B is an atom selected from the group consisting of Fe, Ti, Nb, Ta, W and Mo; and m is an integer of 1 or more. The bismuth oxide polycrystal thin film and the bismuth-based layered compound thin film are formed into a single-phase.
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