patent/US-5665210-A

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5665210-A

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filingDate	1994-05-27^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	1997-09-09^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
publicationDate	1997-09-09^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-5665210-A
titleOfInvention	Method of forming insulating films, capacitances, and semiconductor devices
abstract	Insulating metal oxide or nitride films are deposited by RF magnetron sputtering. During sputtering, the atmospheric gas comprises an oxygen or nitride compound gas and an inert gas. The proportion of the inert gas is decreased to 25 atom % or lower. By this sputtering condition, adverse effects caused by the inert gas is suppressed so that the quality of the insulating film is substantially improved.
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type	http://data.epo.org/linked-data/def/patent/Publication

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