| abstract |
A method of producing a low-k interconnect dielectric material, using PECVD processes and readily available precursors to produce carbon-doped silicon oxide (SiOC). SiOC dielectric materials are produced using conventional silane based gas precursors, of silane and nitrous oxide, along with hydrocarbon gas. The use of methane and acetylene in combination with silane based gas precursors is provided. Methane produces network terminating species, specifically methyl, which replaces oxygen in an Si-O bond within a silicon dioxide network. This increases the volume, reduces the density and the dielectric constant of the material. Acetylene acts as a possible source of carbon and as a modifier, reducing or eliminating undesirable bridging species, such as carbene, or enhancing desireable network terminating species, such as methyl. Following implantation, the material is annealed to reduce the-OH and to potentially further lower the dielectric constant. |