patent/US-6448622-B1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6448622-B1

Outgoing Links

Predicate	Object
assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a819eda0adf22936a52362eeebb9fb4
classificationCPCAdditional	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0735 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-933 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-0118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0109
classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00246
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
filingDate	2000-07-17^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	2002-09-10^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5b29874aabaadf710080613740389e4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c854c26e26c253ff04efbccf042b9dd2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48182d781ec85275aaca9ea4edc64f3d
publicationDate	2002-09-10^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-6448622-B1
titleOfInvention	Polycrystalline silicon-germanium films for micro-electromechanical systems application
abstract	This invention relates to micro-electromechanical systems using silicon-germanium films. Such a system includes one or more layers of Si1-xGex, deposited on a substrate, where 0<x<=1. One or more transistors can be formed on the substrate.
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priorityDate	1999-01-15^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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