| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
2001-03-06^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-04-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f20f5a8faea7f1e0164d2aedf5180a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ce662a9866a71c8a21e2a6963ae802f |
| publicationDate |
2003-04-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6552431-B2 |
| titleOfInvention |
Semiconductor structure with a titanium aluminum nitride layer and method for fabricating same |
| abstract |
A semiconductor device having a contact layer and a diffusion barrier layer is fabricated by preparing a semiconductor substrate, forming a layer of titanium/aluminum alloy on the surface of the substrate, and then heating the resultant structure in a nitrogen ambient to form a contact layer of titanium silicide interposed between the substrate and a diffusion barrier layer consisting of titanium/aluminum/nitride. |
| priorityDate |
1996-05-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |