| abstract |
A method of chemical vapor depositing a titanium nitride layer on a semiconductor wafer within a chemical vapor deposition reactor includes: a) positioning a wafer within a chemical vapor deposition reactor; b) injecting gaseous TiCl 4 , NH 3 and N 2 to within the reactor; and c) maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the TiCl 4 and NH 3 to deposit a uniform film comprising titanium nitride on the wafer, the selected temperature being less than or equal to about 500° C. With a TiN film outwardly exposed, a wafer is annealed by the sequential steps of, a) rapid thermal processing the wafer having the outwardly exposed TiN film to a temperature from about 580° C. to about 700° C.; b) exposing the wafer to NH 3 gas at a temperature from about 580° C. to about 700° C. for at least about 5 seconds to drive chlorine from the TiN film; c) rapid thermal processing the wafer to a temperature of at least about 780° C.; and d) exposing the wafer to N 2 gas at a temperature of at least about 780° C. for at least about 10 seconds. |