patent/US-6611060-B1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6611060-B1

Outgoing Links

Predicate	Object
assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd
classificationCPCAdditional	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
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filingDate	2000-10-03^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	2003-08-26^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7843331633f0c28521e505f0f4fcb04c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31c67ada633b7d4707e1a81572039a6d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3abfedc7a32bd8e59de4c793015d863e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dee13d2eb2f27c31851606f1d4db73f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12e197e4e02a23d773359563a8a9d84a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4847eb532b682970af32cdcd3672c828
publicationDate	2003-08-26^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-6611060-B1
titleOfInvention	Semiconductor device having a damascene type wiring layer
abstract	A method of forming a cap film comprises a first polishing step of performing a polishing operation at selectivity of R1 (=removal rate for the cap film/removal rate for the insulating film), and a second polishing step of performing a polishing operation at selectivity of R2 (=removal rate for the cap film/removal rate for the insulating film). Each of the polishing operations is performed by using a slurry having the condition of R1>R2. By performing the polishing operations at different selectivity, the cap film free from problems such as dishing of the cap film and the residual cap film on side walls of a recess is formed. Consequently, a semiconductor device having an excellent RC characteristic can be provided.
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012180315-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9349689-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9852987-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006012052-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007128848-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9189660-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003124850-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8404582-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9613861-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9812390-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6995090-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8256678-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006017165-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10600882-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006234508-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004121166-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017301620-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9673089-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7223684-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017077257-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011036911-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7709905-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10913137-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8912658-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10147612-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8596539-B2
priorityDate	1999-10-04^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate	Subject
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isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID128516880 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID7124

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