| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-435
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-038 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04R17-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2004-04-14^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-08-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e0b73ae20db239658445c305afa85b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a41224fe981f185c67e3ad7cd8a8566 |
| publicationDate |
2006-08-29^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7096548-B2 |
| titleOfInvention |
Manufacturing method of integrated capacitor |
| abstract |
Disclosed is a manufacturing method of an integrated capacitor including: forming a hole in a semiconductor substrate; depositing a dielectric film on an inner face of the formed hole; heat-treating the deposited dielectric film; depositing a silicon film on the dielectric film; embedding a resist film in the hole except an upper portion of the inner face of the hole on which the dielectric film and the silicon film are deposited; etching the silicon film on the heat-treated dielectric film with the embedded resist film as a mask; removing the resist film; removing the heat-treated dielectric film by etching with the silicon film remaining after the etching as a mask; and embedding an electrode material in the hole having the dielectric film remaining after the removal by etching, and the integrated capacitor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11676768-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7538036-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11404217-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019189357-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10650978-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7358146-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006024904-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006009042-A1 |
| priorityDate |
2004-01-05^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |