http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7122736-B2

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filingDate 2001-08-16^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2006-10-17^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7122736-B2
titleOfInvention Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique
abstract A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) Å/second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) Å/second for the a-SiGe:H intrinsic layer.
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